MS23P01S p-channel enhancement mode power mosfet description the m s23p01s uses advanced trench technology to provide excellent r ds( on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load s witch or in pwm applications. general features v ds = -20v,i d = -2.6a r ds(on) < 160m ? @ v gs =-2.5v r ds(on) < 120m ? @ v gs =-4.5v high power and current handing capability lead free product is acquired surface mount package application pwm applications load switch d g s schematic dia g ram markin g and pin assignment s c70-3/ sot-323 top view packag e marking and ordering information de v ice marking device device package reel size tape width quantity a1shb ms 23p01s sot-23 ?180mm 8 mm 3000 units absolute maximum ratings (t a =25 unless otherw ise noted) parameter s y mbol limit unit drain-s ourc e voltage v ds -20 v gate-source voltage v gs 12 v drain c u rrent-continuous i d -2.6 a drain c u rrent -pulsed ( n ote 1) i dm -13 a maximum po w er dissipation p d 0.9 w operatin g junc tion and st orage temperature range t j ,t st g -55 t o 150 thermal characteristic t hermal resist ance,junction-to-ambient ( n ote 2) r ja 138 /w electrical characteristics (t a =2 5 unless otherwise noted) parameter s y mbol condition min typ max unit off ch aracte ristics drain-s ourc e breakdown voltage bv ds s v gs =0 v i d = - 250 a -20 - v z e ro gate voltage drain current i ds s v ds = - 20v,v gs =0v - - -1 a 1/6
parameter s y mbol condition min typ max unit gate-bod y l eakage current i gss v gs = 12v,v ds =0v - - 100 na on ch aracteristics (n ote 3) gate t h reshold voltage v gs(t h) v ds =v gs ,i d = - 250 a -0.4 -0.7 -1 v v gs = -4.5v, i d =-2 a - 78 120 m ? drain-s ourc e on-state resistance r ds(on) v gs = -2.5v, i d =-1.8a - 102 160 m ? f o rward transconductance g fs v ds =-5 v ,i d =-1a 6 - - s d y namic characteristics (n ote4) input cap a citance c lss - 325 - pf output cap a citance c oss - 63 - pf revers e t ransfer capacitance c rss v ds = - 10v,v gs =0v, f =1.0mhz - 37 - pf s w itching characteristics ( n ote 4) t u rn-on delay time t d( on) - 11 - ns t u rn-on rise time t r - 5.5 - ns t u rn-off delay time t d( o ff) - 22 - ns t u rn-off fall time t f v dd = - 10v, r l =5 ? v gs = -4.5v,r ge n =3 ? - 8 - ns t o tal gate charge q g - 3.2 - nc gate-source c harg e q gs - 0.6 - nc gate-drain charge q gd v ds = - 10v,i d =-2 a , v gs = - 4.5v - 0.9 - nc drain - source diode characteristics diod e forward voltage (n ote 3) v sd v gs =0 v,i s =2a - - -1.2 v diod e forward current ( n ote 2) i s - - -2.6 a notes: 1. r e petitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2 .% 4. guaranteed by design, not subject to production MS23P01S 2/6
t y pical electrical and thermal characteristics figure 1:sw itching t est circuit t j -junction t e mperature( ) figure 3 pow er dissip ation -vds drain-s ource v oltage (v) figure 5 output characteristics v in v out 10 % 10% 50 % 50 % p u lse width in ver ted t d(on ) 90% t r t on 90% 10 % t off t d(off) t f 90% v in v out 10 % 10% 50 % 50 % p u lse width in ver ted t d(on ) 90% 90% t r t on 90% 10 % t off t d(off) t f 90% figure 2:sw itching w aveforms t j -junction t e mperature( ) figure 4 drain current -i d - drain c u rrent (a) figure 6 drain-source on-resist a nce p d power(w) -i d - drain cu rrent (a rdson on-resistance( ) i d - drain cur r ent (a) MS23P01S 3/6
-vgs gate-source vo lt age (v) figure 7 tr ansfer characteristics -vgs gate-source vo lt age (v) figure 9 rdson vs vgs qg gate charge (n c) figure 11 gate charge t j -junction t e mperatu re( ) figure 8 drain-source on-resista nce -vds drain-source v o ltage (v) figure 10 capa cit ance vs vds -vsd source-drain vo lt age (v) figure 12 source- drain diode forwa rd i d - drain curr ent (a) rdson on- resistance( ) -vgs gate-source voltage (v) normalized on-resistance c capacitance (pf) -i s - reverse drain curre nt (a) MS23P01S 4/6
vds drain-source v o ltage (v) figure 13 safe operation area square w a ve pluse duration(sec) figure 14 normalized maximum transient thermal impedance r(t),normalized ef fective transient thermal im p ed ance i d - drain cur r ent (a) MS23P01S 5/6
sc70-3 package information MS23P01S 6/6
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